Space-charge analysis for the admittance of semiconductor junctions with deep impurity levels |
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Authors: | C Ghezzi |
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Institution: | (1) Istituto MASPEC del C.N.R. Parma, Italy;(2) Istituto di Fisica, Università di Ferrara, Italy |
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Abstract: | The space charge analysis within depletion layers in semiconductors containing deep trap levels is reconsidered. A simple approach to the frequency dependence of the admittance ofp
+/n junctions is properly generalized in order to deal with the effect of interface states at heterojunctions and Schottky barriers, as well as with a special case for the space distribution of the trap density. The density of interface states atp-Ge/CdS heterojunctions is so derived. Approximate analytical solutions accounting for a spatially distributed time constant are obtained for the admittance ofp
+/n junctions with a single trap state. A comparison with experimental data is given and discussed. |
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Keywords: | 71 55 85 30 |
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