Analysis of organic contaminations on Si(100) by thermal desorption spectroscopy

Summary Temperature and chemical state selective analysis of organic contaminants on Si(100) present after storage in air can be performed using thermal desorption spectroscopy (TDS). Samples stored for different times in air were characterized by XPS and then subjected to TDS. Hydrocarbon fragments were observed as well as a significant partial pressure of formaldehyde occurring as a decomposition product from higher molecular contaminants. Effects of treatment with HF and heating under reduced pressures of molecular oxygen were studied. The paper describes also some general analytical features of the technique.