On the modification of a model of minority charge-carrier diffusion in semiconductor materials based on the use of recursive trigonometric functions and the estimation of the stability of solutions for the modified model |
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Authors: | E V Seregina M A Stepovich A M Makarenkov |
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Institution: | 1. Tsiolkovsky Kaluga State University, Kaluga, 248023, Russia 2. Kaluga Branch, Bauman Moscow State Technical University, Kaluga, 248000, Russia
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Abstract: | A modified model of the diffusion of minority charge carriers generated by a broad electron beam in semiconductor materials is proposed. New methods for the approximation of step functions are used, and an estimate of the stability of solutions to the diffusion equation is obtained for this model. |
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