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Characteristics of dielectric film charging,depending on their thickness upon electron irradiation |
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| Authors: | A. V. Gostev E. N. Evstaf’eva E. I. Rau A. M. Tagachenkov A. A. Tatarintsev |
| Affiliation: | 2. Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, Chernogolovka, 142432, Russia 1. Faculty of Physics, Moscow State University, Moscow, 119991, Russia 3. Institute of Nanotechnologies and Microelectronics, Russian Academy of Sciences, Moscow, 119991, Russia |
| Abstract: | Basic principles of charging dielectric films on conducting substrates upon irradiation with electrons of average energy are considered. A ratio associating the equilibrium charging potential and the mean thickness of the dielectric film is calculated. The analytical expression is in good agreement with experimental results over a wide range of energies for electrons irradiating the target. |
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