Improvement of total-dose irradiation hardness of silicon-on-insulator materials by modifying the buried oxide layer with ion implantation

The hardening of the buried oxide (BOX) layer of separation by implantedoxygen (SIMOX) silicon-on-insulator (SOI) wafers against total-dose irradiationwas investigated by implanting ions into the BOX layers. The tolerance tototal-dose irradiation of the BOX layers was characterized by thecomparison of the transfercharacteristics of SOI NMOS transistors before and after irradiation toa total dose of 2.7Mrad(SiO₂. The experimental results show that the implantation ofsilicon ions into the BOX layer can improve the tolerance of the BOX layersto total-dose irradiation. The investigation of the mechanism of theimprovement suggests that the deep electron traps introduced by siliconimplantation play an important role in the remarkable improvement inradiation hardness of SIMOX SOI wafers.