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反熔丝FPGA延时电路γ瞬时辐射效应
引用本文:杜川华,詹峻岭,徐曦.反熔丝FPGA延时电路γ瞬时辐射效应[J].强激光与粒子束,2006,18(2):321-324.
作者姓名:杜川华  詹峻岭  徐曦
作者单位:中国工程物理研究院 电子工程研究所, 四川 绵阳 621900
摘    要: 简要叙述了反熔丝FPGA的基本结构,介绍了一种FPGA延时电路的工作原理以及利用该电路在“强光一号”脉冲加速器上进行γ瞬时辐照试验的方法,给出了试验测量结果。分析表明:高剂量率γ瞬时电离辐射会破坏FPGA延时电路一个信号周期的工作状态,因此存在功能失效的可能性。但就整体而论,反熔丝FPGA抗瞬时辐射的性能要优于其它许多大规模CMOS集成电路。

关 键 词:反熔丝FPGA  延时电路  辐射效应  γ剂量率
文章编号:1001-4322(2006)02-0321-04
收稿时间:2005-08-16
修稿时间:2005-11-25

γ transient radiation effects of antifuse-based FPGA delay circuit
DU Chuan-hua,ZHAN Jun-ling,XU Xi.γ transient radiation effects of antifuse-based FPGA delay circuit[J].High Power Laser and Particle Beams,2006,18(2):321-324.
Authors:DU Chuan-hua  ZHAN Jun-ling  XU Xi
Institution:Institute of Electronic Engineering, CAEP, P.O.Box 919-522, Mianyang 621900, China
Abstract:This paper depicts in brief the basic information of ACTEL's antifuse-based FPGA(field programmable gate array)and the working theory of FPGA delay circuits. The method of measurement of FPGA delay circuits on Qiangguang Ⅰgenerator is discussed. And some of the results are presented. The analysis shows that γ transient radiation will destroy a signal period state, so, to some extent, there is a possibility of disabled FPGA function. However, as a whole, the performance of FPGA is better than many other CMOS large scale integrated circuit at high γ dose rate.
Keywords:Delay circuits  Radiation effect  γ dose rate
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