Effect of GeIon on Electrical Properties of (La0.1Ca0.9)(Mn1−xGex)O3 |
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Authors: | Hideki Taguchi Masanori Sonoda Mahiko Nagao |
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Institution: | Research Laboratory for Surface Science, Faculty of Science, Okayama University, Okayama, 700-8530, Japan |
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Abstract: | Orthorhombic perovskite-type (La0.1Ca0.9)(Mn1−xGex)O3was synthesized in the range (0.00≤x≤0.10). Since the ionic radius of the Ge4+ion is equal to that of the Mn4+ion, the (Mn, Ge)–O(1, 2) distances and the angles for (Mn, Ge)–O(1, 2)–(Mn, Ge) are independent of the composition (x). From the measurement of the electrical resistivity (ρ), all manganates exhibit a metal–insulator transition. With increasingx, the metal–insulator transition temperature (Tt) increases anddρ/dTdecreases. The cation–anion–cation overlap integrals are weakened by the Ge4+ion. |
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