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低温湿化学法可控制备一维Te纳米线/棒
引用本文:洪小杰,樊希安,张慧轩,蔡新志,杨帆,陆磊. 低温湿化学法可控制备一维Te纳米线/棒[J]. 高等学校化学学报, 2013, 34(8): 1812-1817. DOI: 10.7503/cjcu20130117
作者姓名:洪小杰  樊希安  张慧轩  蔡新志  杨帆  陆磊
作者单位:武汉科技大学钢铁冶金及资源利用省部共建教育部重点实验室, 武汉 430081
基金项目:国家自然科学基金(批准号:11074195);绿色制造与节能减排科技研究中心重点项目(批准号:A1001);钢铁冶金及资源利用教育部重点实验室开放基金资助
摘    要:采用低温湿化学法制备了形貌可调的Te纳米线/棒. 考察了反应温度和还原剂滴加速率对产物的物相和微观结构的影响规律. 研究结果表明, 随着反应温度的升高, Te纳米线的长度逐渐变小, 直径逐渐增大; 随着还原剂滴加速率减慢, 产物Te纳米线长度增加, 直径增大. 通过考察不同反应阶段产物的形貌和结构, 可推测Te纳米线/棒的生长模式为: 反应初期, 溶解在乙二醇内的TeO2被还原为亚稳态的活性α-Te和稳态的τ-Te, 随着反应的进行, 亚稳态的活性α-Te将重新溶解, 并被还原为稳态的τ-Te析出. τ-Te沿[001]方向轴向生长的特性应归因于其晶体的各向异性.

关 键 词:低温湿化学  Te纳米线  Te纳米棒  半导体  
收稿时间:2013-01-30

Controlled Preparation of Te Nanowires/Nanorods by Low Temperature Wet Chemical Methods
HONG Xiao-Jie,FAN Xi-An,ZHANG Hui-Xuan,CAI Xin-Zhi,YANG Fan,LU Lei. Controlled Preparation of Te Nanowires/Nanorods by Low Temperature Wet Chemical Methods[J]. Chemical Research In Chinese Universities, 2013, 34(8): 1812-1817. DOI: 10.7503/cjcu20130117
Authors:HONG Xiao-Jie  FAN Xi-An  ZHANG Hui-Xuan  CAI Xin-Zhi  YANG Fan  LU Lei
Affiliation:Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education, Wuhan University of Science and Technology, Wuhan 430081, China
Abstract:In the present work, Te nanowires/nanorods were prepared by low temperature wet chemical methods. The effects of reaction temperature and the dropping rate of reducing agent on the phase and microstructure of the products were investigated. The results showed that the diameter of Te nanowires increased and the length decreased with the increase of reaction temperature. With decreasing the dropping rate of hydrazine hydrate, the length and diameter of the Te nanowires all increased. The growth principle of Te nanowires could be inferred by observing the morphology and structure of the products during different reaction stages. At early stage of the reaction, the TeO2 dissolved in ethylene glycol were reduced into the metastable activated α-Te and stable τ-Te. As the reaction proceeded, metastable α-Te would be re-dissolved and be reduced into the stable τ-Te. The axial growth characteristic along [001] direction of τ-Te crystal should be ascribed to its significant crystal anisotropy.
Keywords:Low temperature wet chemical method  Te nanowire  Te nanorod  Semiconductor  
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