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Resistive switching in a negative temperature coefficient metal oxide memristive one-port |
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| Authors: | Kunpeng Cai Zhaoyu He Jingbo Sun Bo Li Ji Zhou |
| Affiliation: | 1. State Key Laboratory of New Ceramics and Fine Processing, Department of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China 2. Advanced Materials Institute, Shenzhen Graduate School, Tsinghua University, Shenzhen, 518055, China 3. Department of Electrical Engineering, University at Buffalo, The State University of New York, Buffalo, NY, 14260, USA |
| Abstract: | A current-controlled memristive one-port was constructed from cobalt monoxide (CoO) using a traditional solid reaction method at 1150 °C in argon atmosphere. Hysteretic current–voltage (I–V) characteristics and resistance switching were investigated in the as-obtained Ag/CoO/Ag cell. Dependences of the I–V loop on voltage range (0 to 10, 11, and 12 V), voltage scan rate (0.1, 1, and 10 V/s), and temperature (323, 373, and 423 K) were reported. A thermistor model for materials with negative temperature coefficient (NTC) was proposed for explanation of the mechanism. An ideal NTC thermistor-based memristive one-port would broaden the applications of memristors and memristive devices. |
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