Effects of laser pulse wavelength and laser fluence on the characteristics of silver nanoparticle generated by laser ablation

Electrically pumped ultraviolet random lasing was achieved in metal-insulator-semiconductor (MIS) diodes based on ZnO films at room temperature. The ZnO films were grown by plasma assisted molecular beam epitaxy. Two different kinds of insulator layers, SiO _x (0<x≤2) and AlO _x (0<x≤1.5) were deposited by electron beam evaporation. X-ray diffraction experiments found these oxide layers were amorphous (or microcrystals), and X-ray photoelectron spectroscopy confirmed the Si and Al were fully oxidized. Compared with devices using SiO _x as the insulator layer, diodes with evaporated AlO _x layers showed a lower working threshold forward current (～20 mA to ～26 mA) and higher emission intensity. Periodic features indicating formation of closed-loop paths were deduced by the power Fourier transform of electroluminescence spectra. The cavity length of both devices increased as forward currents increased, while a larger cavity length was always obtained in the AlO _x -involved device under the same working current. The improved performance was attributed to larger hole amount in AlO _x layers. These results revealed that evaporated AlO _x can serve as good electron blocking and hole supplying layers for hetero-structures.