Theoretical simulation of photovoltaic response of graphene-on-semiconductors

Using the fundamental models for voltage and current, we report on the photovoltaic behavior of graphene-on-semiconductor-based devices. The graphene-n-Si and graphene-n-GaAs systems are studied for open-circuit voltage (V _OC) and short-circuit current density (J _SC) under low- and high-level injection conditions. The effects of semiconductor doping density and surface recombination velocity on the V _OC of both systems are investigated. The V _OC for graphene-n-Si under low- and high-level injection conditions are found to be 0.353 V and 0.451 V, respectively, whereas the V _OC for graphene-n-GaAs under low- and high-level injection conditions are 0.441 V and 0.471 V, respectively. The J _SC for graphene-n-Si under low- and high-level injection conditions are calculated as 3 mAcm^?2 and 4.78 mAcm^?2, respectively, whereas the J _SC for graphene-n-GaAs under low- and high-level injection conditions are 5.2 mAcm^?2 and 6.68 mAcm^?2, respectively. These results are in good agreement with the reported experimental work.