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透射式变掺杂GaAs光电阴极研究
引用本文:陈怀林,常本康,牛军,张俊举. 透射式变掺杂GaAs光电阴极研究[J]. 应用光学, 2013, 34(2): 230-234
作者姓名:陈怀林  常本康  牛军  张俊举
作者单位:1.南京理工大学 电子工程与光电技术学院,江苏 南京 210094
基金项目:国家自然科学基金资助课题(60801036)
摘    要:为了将变掺杂GaAs材料应用于微光像增强器,开展了透射式变掺杂GaAs光电阴极实验研究,制备了2种反转结构透射式变掺杂GaAs光电阴极。测试了玻璃粘接前后GaAs光电阴极载流子浓度变化,发现高温粘接后载流子浓度增加现象。通过测试高温激活的透射式变掺杂GaAs光电阴极发现,在450 nm~550 nm波段内,变掺杂GaAs光电阴极仍然具有较高的光谱响应。

关 键 词:GaAs光电阴极   变掺杂   光谱响应   透射式
收稿时间:2012-10-27

Transmission-mode varied-doping GaAs photocathode
CHEN Huai-lin,CHANG Ben-kang,NIU Jun,ZHANG Jun-j,uuml,. Transmission-mode varied-doping GaAs photocathode[J]. Journal of Applied Optics, 2013, 34(2): 230-234
Authors:CHEN Huai-lin  CHANG Ben-kang  NIU Jun  ZHANG Jun-jü  
Affiliation:1.School of Electronic and Optical Engineering,Nanjing University of Science and Technology,Nanjing 210094,China
Abstract:In order to apply varied-doping GaAs material to low-light-level image intensifier, the transmission-mode varied-doping GaAs photocathode experiment was carried out and the transmission-mode varied-doping GaAs photocathodes with two inversion structures were prepared. By testing the carrier concentration change of the GaAs photocathode before and after glass bonding, it is found that the carrier concentration increases after bonding at a high temperature. Moreover, by testing the transmission-mode varied-doping GaAs photocathode of high-temperature activation, result shows that the varied-doping GaAs photocathode still has a high spectral response in the band of 450 nm ~ 550 nm.
Keywords:GaAs photocathode  variable-doping  spectral response  transmission-mode
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