Surface interactions of molecular C60 and impact on Ni(100) and Co(0001) film growth: A scanning tunneling microscopy study

Here, the interactions of C₆₀ at the surface of pseudomorphic Ni/Cu(100) and Co/Ru(0001) thin films and its effect on film growth and morphology were determined using in-situ scanning tunneling microscopy (STM) and Auger electron spectroscopy (AES). The novel development of C₆₀-metallic based nanosystems, such as C₆₀ molecular junction transistors, hinges on our ability to understand the factors governing structural stability in these nanosystems and the nature of the bond interactions at the C₆₀–metal interface. In this study, C₆₀ deposited onto the Ni(100) film surface is observed to be fairly immobile and uniformly distributed across the Ni surface. On the Co(0001) film surface however, C₆₀ mobility is observed to be severely limited in some regions and highly mobile in others dependent upon Co film surface reconstruction, resulting in a non-uniform distribution of C₆₀ across the Co film surface. Despite the presence of C₆₀ on the Ni surface, there is no obvious influence of the C₆₀ on further Ni film growth. In contrast, during Co film growth, islands only nucleate and grow from step edges or locally around C₆₀ molecules. The strength of the Co–C₆₀ bond interaction appears stronger than the Co–Co bond on Co film terrace. Generally, the Ni and Co films both continue epitaxial film growth in the presence of molecular C₆₀. AES results indicate the C₆₀ molecules maintain their chemical integrity during growth.