Domain structure and optical property of epitaxial indium oxide film deposited on MgO(100) substrate

Indium oxide (In₂O₃) film has been deposited on MgO(100) substrate at 600 °C by metalorganic chemical vapor deposition (MOCVD). The crystal structure and epitaxial relationship of the sample were examined by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). The results showed a clear epitaxial relationship of In₂O₃(111)||MgO(100) with In₂O₃[011?]||MgO<072> or In₂O₃[01$\overline{1}$]||MgO<011>. A multiple domain structure was found inside the In₂O₃ film and a theoretical model clarifying the geometrical relationships between each domain and the substrate has been proposed. Scanning electron microscopy (SEM) micrograph showed that the main surface features were triangle-shaped grains on the film. The absolute average transmittance of the obtained film in the visible range was over 93%.