Precision of single-qubit gates based on Raman transitions |
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Authors: | X Caillet C Simon |
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Institution: | (1) Laboratoire de Spectrométrie Physique, CNRS, Université de Grenoble 1, St. Martin d'Hères, France |
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Abstract: | We analyze the achievable precision for single-qubit gates that
are based on off-resonant Raman transitions between two
near-degenerate ground states via a virtually excited state. In
particular, we study the errors due to non-perfect adiabaticity
and due to spontaneous emission from the excited state. For the
case of non-adiabaticity, we calculate the error as a function of
the dimensionless parameter χ=Δτ, where Δ is
the detuning of the Raman beams and τ is the gate time. For
the case of spontaneous emission, we give an analytical argument
that the gate errors are approximately equal to Λ
γ/Δ, where Λ is the rotation angle of the
one-qubit gate and γ is the spontaneous decay rate, and we
show numerically that this estimate holds to good approximation. |
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Keywords: | 03 67 Lx Quantum computation 73 21 La Quantum dots |
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