| CZ法生长参数对TeO2晶体质量的影响 |
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| 引用本文： | 陶绍军,桑文斌,钱永彪,闵嘉华,方雅珂. CZ法生长参数对TeO2晶体质量的影响[J]. 人工晶体学报, 2003, 32(2): 165-169 |
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| 作者姓名： | 陶绍军 桑文斌 钱永彪 闵嘉华 方雅珂 |
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| 作者单位： | 上海大学材料学院,上海,201800 |
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| 摘 要： | 本文主要讨论CZ法生长TeO2晶体中温度梯度、拉速、转速等工艺参数对晶体质量的影响,分析了晶体开裂、包裹物等宏观缺陷以及位错等微观缺陷的形成机理.从晶体形态、包裹体和位错密度变化等方面探讨了晶体生长参数与晶体缺陷之间的内在关系.
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| 关 键 词： | 氧化碲晶体 CZ法 工艺参数 晶体缺陷, |
| 文章编号： | 1000-985X(2003)02-0165-05 |
| 修稿时间： | 2002-09-08 |
Study on the Influence of Growth Parameters on TeO2 Single Crystal Quality |
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| TAO Shao-jun,SANG Wen-bin,QIAN Yong-biao,MIN Jia-hua,FANG Ya-ke. Study on the Influence of Growth Parameters on TeO2 Single Crystal Quality[J]. Journal of Synthetic Crystals, 2003, 32(2): 165-169 |
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| Authors: | TAO Shao-jun SANG Wen-bin QIAN Yong-biao MIN Jia-hua FANG Ya-ke |
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| Abstract: | The effects of growth parameters, such as temperature gradient, pulling rate and rotation rate, on the quality of TeO 2 crystals grown by Czochralski method were studied in this paper. The formation mechanism of macro-defects such as crystal cracks and inclusions and micro-defects such as dislocation was discussed. The relationships between defects and growth parameters were explored from the crystal shape, inclusions and change of dislocation density. |
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| Keywords: | TeO 2 crystal Czochralski method growth parameters crystal defects |
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