Effects of aluminum doping and substrate temperature on zinc oxide thin films grown by pulsed laser deposition |
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Authors: | Md Alauddin Jae Kyu Song Seung Min Park |
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Institution: | (1) Faculty of Science, Department of Physics, Anadolu University, 26470 Eskisehir, Turkey;(2) Faculty of Arts and Sciences, Department of Physics, Firat University, 23169 Elazig, Turkey |
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Abstract: | Aluminum-doped zinc oxide (AZO) thin films have been deposited on amorphous fused silica substrates by pulsed laser ablation
of a Zn:Al metallic targets. We varied the film growth condition such as the substrate temperature and Al concentrations.
The films were deposited at substrate temperatures ranging from 20 to 600°C with oxygen partial pressure of 1 torr. The characteristics
of the deposited films were examined by analyzing their photoluminescence (PL), X-ray diffraction (XRD), and UV–visible spectra.
It is observed that the optical bandgap energy of the deposited films increased with the increase of Al concentration and
substrate temperature. Besides, the PL peak energy shifted to blue and the Stokes shift became larger as the Al content increased. |
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