Power scale-up of the diode-pumped actively Q-switched Nd:YVO4 Raman laser with an undoped YVO4 crystal as a Raman shifter |
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| Authors: | K.W. Su Y.T. Chang Y.F. Chen |
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| Affiliation: | (1) Department of Electrophysics, National Chiao Tung University, F353, Engineering Building VI, No 1001, Ta Hsueh Rd, Hsinchu, 300, Taiwan |
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| Abstract: | With an undoped YVO4 crystal as a Raman shifter, we substantially improved the reliability and the output performance of an actively Q-switched 1176-nm Nd:YVO4 Raman laser. With an incident pump power of 18.7 W, the average power is greater than 2.6 W at 80 kHz. The pulse width of the pulse envelope is shorter then 5 ns with mode-locked modulation. With an incident pump power of 12.7 W, the pulse energy and peak power is higher than 43 μJ and 14 kW at 40 kHz. PACS 42.55.Ye; 42.55.Xi; 42.60.Gd |
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