Voltage-controlled spin selection in a magnetic resonant tunneling diode |
| |
Authors: | Slobodskyy A Gould C Slobodskyy T Becker C R Schmidt G Molenkamp L W |
| |
Affiliation: | Physikalisches Institut (EP3), Universit?t Würzburg, Am Hubland, D-97074 Würzburg, Germany. |
| |
Abstract: | We have fabricated all II-VI semiconductor resonant tunneling diodes based on the (Zn,Mn,Be)Se material system, containing dilute magnetic material in the quantum well, and studied their current-voltage characteristics. When subjected to an external magnetic field the resulting spin splitting of the levels in the quantum well leads to a splitting of the transmission resonance into two separate peaks. This is interpreted as evidence of tunneling transport through spin polarized levels, and could be the first step towards a voltage controlled spin filter. |
| |
Keywords: | |
本文献已被 PubMed 等数据库收录! |
|