| Si Ge量子阱和超晶格的光发射 |
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| 引用本文： | 周均铭. Si Ge量子阱和超晶格的光发射[J]. 物理, 1996, 25(6): 369-374 |
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| 作者姓名： | 周均铭 |
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| 作者单位： | 中国科学家院物理研究所!北京100080 |
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| 摘 要： | 系统地介绍了近几年来国内外对ＳｉＧｅ量子阱及短周期超晶格光发射的研究现状。由于Ｓｉ，Ｇｅ材料及器件在微电子学领域内的无可比拟的优越性，所以，超过９０％的芯片技术是Ｓｉ基的，然而，由于Ｓｉ，Ｇｅ是间接带隙，载流子跃迁几率小，其光电应用受到很大的限制，为此，人们作出了不懈的努力，并取得了可喜的进展。
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| 关 键 词： | 光致荧光 硅 电致荧光 锗 量子阱 超晶格 |
Luminescence of SiGe Quantum Wells and Superlattices |
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| Zhou Junming. Luminescence of SiGe Quantum Wells and Superlattices[J]. Physics, 1996, 25(6): 369-374 |
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| Authors: | Zhou Junming |
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| Affiliation: | Zhou Junming |
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| Abstract: | An overview is presented of the present status of Si/Ge quantum wells and superlat- tices. More than 90 percent of chips are Si-based because of their incomparable superiority in the field of micro~electronics. However, due to their indirect band-gap, the probability of translation of the car- riers is very low, which limits their optoelectronic applications. Much has been done, and great im- provement has been achieved. |
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| Keywords: | photoluminescence electroluminescence quantum well superlattice surface seg- regation surfactant molecular beam epitaxy |
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