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Lattice relaxation of graphene under high magnetic field
Authors:Wang Zi-Wu  Li Shu-Shen
Institution:Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China. zwwang@semi.ac.cn
Abstract:We investigate the n = 0 Landau level (LL) in monolayer graphene with high magnetic field. We find that the energy gap is opened in the n = 0 LL by the magnetic-field-dependent lattice relaxation originating from the interactions between the electrons (holes) and longitudinal-deformation-acoustic phonon. Both the linear and square-foot dependence of the energy gap on the magnetic field are obtained depending on the choice of the Debye cut-off wave number for the acoustic phonon. The relations of the Huang-Rhys parameter (lattice relaxation strength) and the transition linewidths with the magnetic field are also discussed. Our results agree with the current experiments on graphene in high magnetic field, and provide an alternative explanation for the experimental measurements.
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