Negative luminescence from mid-wave infrared HgCdTe diode arrays |
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Authors: | J R Lindle W W Bewley I Vurgaftman J R Meyer J L Johnson M L Thomas W E Tennant |
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Institution: | a Code 5613, Naval Research Laboratory, Washington, DC 20375, USA;b Rockwell Science Center, Thousand Oaks, CA 91360, USA |
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Abstract: | A self-referencing, optical modulation technique was used to measure the negative luminescence efficiencies of an array of mid-wave infrared HgCdTe photodiodes with cutoff wavelength 4.6 μm as a function of sample temperature. The internal efficiency at a wavelength of 4 μm was 93% at 295 K, and nearly independent of temperature in the 240–300 K range. This corresponds to an apparent temperature reduction >50 K at room temperature and >30 K at 240 K. Moreover, the reverse-bias saturation current density was only 0.13 A/cm2. The measured transmission and emission spectra were simulated using empirical HgCdTe absorption formulas from the literature. |
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Keywords: | Negative luminescence IR photodiodes HgCdTe Cold shielding |
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