Nondislocation etch pits in gallium arsenide obtained by vapor-phase epitaxy

The effect of the vapor-phase epitaxy conditions on the formation of small nondislocation etch pits (SEP) in autoepitaxial gallium arsenide layers was investigated by the oblique-section metallographic technique. The investigations showed that SEP are found in n-type low-dislocation layers and are located directly in the junction region. The width of the SEP region depends on the concentration and type of dopant in the source, the type of substrate, and also on the concentration of transport agent at the system inlet. The formation of SEP in the layers involves impurity segregates of the second phase.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 60–64, September, 1979.We thank V. A. Moskovkin and L. P. Porokhovnichenko for providing the specimens for the investigations.