Optimization of facet coating for highly strained InGaAs quantum well lasers operating at 1200 nm |
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| Authors: | V.A. Kheraj C.J. Panchal P.K. Patel B.M. Arora T.K. Sharma |
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| Affiliation: | aApplied Physics Department, Faculty of Technology & Engineering, The M. S. University of Baroda, Vadodara-390001, Gujarat, India;bDepartment of Condensed Matter Physics and Material Science, Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, Mumbai 400005, India;cRaja Ramanna Centre for Advanced Technology, Indore-452013, (M.P), India |
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| Abstract: | The optical output power of a laser diode can be enhanced by anti-reflection (AR) and high-reflection (HR) facet coatings, respectively, at the front and back facet. AR and HR coatings also serve the purpose of protection and passivation of laser diode facets. In this work, we have designed and optimized a single layer λ/4 thick Al2O3 film for the AR coating and a stack of λ/4 thick Al2O3/λ/4 thick Si bi-layers for the HR coating for highly strained InGaAs quantum-well edge emitting broad area (BA) laser diodes. Effect of the front and back facet reflectivities on output power of the laser diodes has been studied. The light output versus injected current (L–I characteristics) measurements were carried out on selected devices before and after the facet coatings. We have also carried out the numerical simulation and analysis of L–I characteristics for this particular diode structure. The experimental results have been compared and verified with the numerical simulation. |
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| Keywords: | Diode lasers (42.55.Px) Quantum well (78.67.De) Dielectric thin films (77.55.+F) |
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