微小尺寸立方氮化硼晶体蓝紫光发射光谱的测量与分析

对于微小尺寸的N型宽禁带立方氮化硼(CBN)半导体晶体，在施加恒稳电场的情况下，观察到电致发光现象。通过置CBN单晶样品于光栅单色仪抛物面反射镜焦点的方法，对于CBN的蓝紫光辐射获得了测试系统的最大入射光通量和理想的信噪比。在350～450 nm波长范围内，CBN加上4.7×106 V·cm-1恒稳电场条件下，测量出立方氮化硼的蓝紫光发射光谱。同时，结合基于第一性原理的GGA方法计算出的立方氮化硼能带结构和电子态密度，以及测量得到的非线性j-E关系和电击穿特性，讨论了发光机理。提出了在雪崩击穿前的缺陷偶极子极化和击穿后，产生大量的激发态电子，电子在Γ能谷和X能谷间迁移的发光机制。

Measurement and Analysis of Blue-Violet Light Emitting Spectrum on Tiny Cubic Boron Nitride Crystal

The electroluminescence effect can be observed by the micro N-type wide-gap CBN semiconductor crystal under the condition of static eletric field.The micro N-type CBN crystal was fixed on the focus of the parabolic reflector of grating monochromator,and the maximum value of transmission ratio and the ideal signal-noise ratio can be obtained.Under the condition of static ectric-field intensity (4.7×10~6 V·cm~(-1)),the blue-violet light-emitting spectrum of the CBN crystal was measured in the range from 350 to 450 nm.The construction of the CBN energy band,which was calculated with the First-principles method,the nonlinear relationship between current density and the ectric-field intensity that was measured and the phenomenon of electrical break-down were considered together to enable us to discuss the luminescence mechanism.Finally,the authors came up with the luminescence mechanism concerning electron migration from F energy valley to X energy valley.The large number of excited electrons we talked about were generated by polarization and breakdown of defect dipole before avalanche breakdown occurred.