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Photodesorption and photofragmentation of disilane adsorbed on a hydrogen terminated Si(100) surface
Authors:S Wright  O Dippel  E Hasselbrink  
Institution:

Fysisk Institut, Odense Universitet, Campusvej 55, DK-5230, Odense M, Denmark

Abstract:The photochemical mechanisms leading to the desorption and fragmentation of Si2H6 adsorbed on a hydrogen terminated Si(100) surface have been explored by recording the time-of-flight distributions of products escaping from the surface and by using electron energy loss spectroscopy to probe possible electronic excitations. Photodesorption of intact Si2H6 involves hot electrons that lose energy and move to the conduction band edge before initiating desorption. When the wavelength of the incident light is 193 nm, Si2H6 fragments give mostly Si, SiH2, H2 and SiH4, but this pathway is quenched at longer wavelengths. This is consistent with direct excitation, but we also show that a negative ion resonance is accessible to substrate electrons that have been excited by 193 nm light.
Keywords:Electron energy loss spectroscopy  Photochemistry  Photon stimulated desorption  Silicon  Surface photochemistry
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