原子发射光谱法研究SCB放电特性

半导体桥(SCB)通过桥膜放电进行含能材料的点火,具有低点火能量、高安全性以及能与数字逻辑电路组合等优点.文章利用原子发射光谱技术研究了其放电特性.首先用Cu原子谱线510.5和521.8 nm进行温度测垦,用Si原子谱线390.5 nm和Si离子线413.0 nm进行电子密度测量,同时获得SCB放电温度和电子密度随时间分布的测量结果.在放电电压为20 V,充电电容为47 μF条件下,1.0 Ω的SCB放电温度分布在2 500～4 300 K之间,电子密度约为1016 cm-3左右.然后根据光谱诊断结果,结合等离子体成立的空间尺度和时问尺度条件,判断两种规格的SCB的放电行为是否产生等离子体.该研究结果为SCB桥体的设计以及点火方式的控制提供了理论依据.也为瞬态小尺寸等离子体的判断和诊断提供了一种参考方法.

Research on SCB Discharge Behavior with Atomic Emission Spectroscopy

Semiconductor bridge (SCB) was utilized to ignite energetic materials with thin film discharge and characterized of low input energy, high safety and logic control possibility. SCB discharge was diagnosticated with atomic emission spectroscopy. Firstly, discharge temperature was acquired with copper atom spectral lines 510.5 and 521.8 nm, and electron density was calculated with silicon atom spectral line 390.5 nm and corresponding ion line 413.0 nm. As for resistance 1.0 Ω of SCB with the discharge voltage of 20 V and capacity of 47 μF, its discharge temperature was about 2 500-4 300 K and electron density 1016 cm-3. Meanwhile, the temperature and density Vs time distributions were acquired simultaneously. And then with the diagnosis results, the discharge behaviors of two sorts of SCB were judged according to plasma space-dimension and time-dimension restrictions. This research set up an efficient technique for the diagnosis of transient small-size discharge behavior and provided instructions for the design of SCB and discharge condition.