首页 | 本学科首页   官方微博 | 高级检索  
     

近空间升华法制备CdS多晶薄膜的研究
引用本文:杨定宇,夏庚培,郑家贵,冯良桓,蔡亚平. 近空间升华法制备CdS多晶薄膜的研究[J]. 光谱学与光谱分析, 2009, 29(1): 56-61. DOI: 10.3964/j.issn.1000-0593(2009)01-0056-06
作者姓名:杨定宇  夏庚培  郑家贵  冯良桓  蔡亚平
作者单位:四川大学材料科学与工程学院,四川,成都,610064;成都信息工程学院光电技术系,四川,成都,610225;四川大学材料科学与工程学院,四川,成都,610064
基金项目:国家高技术研究发展计划(863计划),四川省应用基金,中国高校博仁点基金 
摘    要:系统地研究了近空间升华法(CSS)制备CdS薄膜沉积速率的影响因素。发现CdS薄膜的沉积速率随升华源温度的升高而增大,但随衬底温度和沉积气压的上升而下降。对所制备样品的结构、表面形貌和光谱透过率特性进行了测试,结果表明:(1)不同氧分压下沉积的CdS薄膜沿(103)晶向择优生长。CdCl2氛围下退火后,(103)晶向的优势得到进一步加强;(2)不同氧分压制备的CdS薄膜致密且粒径均匀,晶粒的大小随着衬底温度的升高而增大,但薄膜的粗糙度也随之增大;(3)随着CdS薄膜厚度的减小,可见光中短波段的透过率有所增大,有利于提高太阳电池的短波光谱响应。并将CSS制备的CdS多晶薄膜用于CdTe太阳电池的制作,获得了10.29%的光电转换效率,初步验证了该制作工艺的可行性。

关 键 词:CdTe太阳电池  近空间升华法  CdS多晶簿膜
收稿时间:2007-11-06

Research on the Polycrystalline CdS Thin Films Prepared by Close-Spaced Sublimation
YANG Ding-yu,XIA Geng-pei,ZHENG Jia-gui,FENG Liang-huan,CAI Ya-ping. Research on the Polycrystalline CdS Thin Films Prepared by Close-Spaced Sublimation[J]. Spectroscopy and Spectral Analysis, 2009, 29(1): 56-61. DOI: 10.3964/j.issn.1000-0593(2009)01-0056-06
Authors:YANG Ding-yu  XIA Geng-pei  ZHENG Jia-gui  FENG Liang-huan  CAI Ya-ping
Affiliation:1. School of Material Science and Engineering, Sichuan University, Chengdu 610064, China2. Department of Optoelectronic Technology, Chengdu University of Information Technology, Chengdu 610225, China
Abstract:In the present paper,the factors of influence on the deposition rate of CdS films prepared by close-spaced sublimation(CSS) were first studied systematically,and it was found from the experiments that the deposition rate increased with the raised temperature of sublimation source,while decreased with the raised substrate temperature and the deposition pressure. The structure,morphology and light transmittance of the prepared samples were tested subsequently,and the results show:(1) The CdS films deposited u...
Keywords:CdTe solar cells  Close-spaced sublimation  Polycrystalline CdS thin films  
本文献已被 CNKI 维普 万方数据 等数据库收录!
点击此处可从《光谱学与光谱分析》浏览原始摘要信息
点击此处可从《光谱学与光谱分析》下载全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号