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适用于厚膜剥离的图形反转双层胶光刻技术
引用本文:郭喜,支淑英,杨春莉,巩爽.适用于厚膜剥离的图形反转双层胶光刻技术[J].激光与红外,2010,40(3):257-259.
作者姓名:郭喜  支淑英  杨春莉  巩爽
作者单位:华北光电技术研究所,北京,100015
摘    要:介绍了一种适用于厚膜剥离的图形反转双层胶光刻技术,采用图形反转胶和正型光刻胶,选择合适的光刻工艺形成了光刻胶倒梯形的剖面结构,可以成功剥离与胶层厚度相同的膜层,厚度可达13μm。同时对一些技术机理和关键工艺条件进行了讨论。

关 键 词:图形反转  双层光刻胶  厚膜剥离  倒梯形  

Image-reversal dual layer photolithography technology for thick film lift-off
GUO Xi,ZHI Shu-ying,YANG Chun-li,GONG Shuang.Image-reversal dual layer photolithography technology for thick film lift-off[J].Laser & Infrared,2010,40(3):257-259.
Authors:GUO Xi  ZHI Shu-ying  YANG Chun-li  GONG Shuang
Institution:North China Research Institute of Electro-optics;Beijing 100015;China
Abstract:The paper introduced the image-reversal dual layer photolithography technology that is suitable for thick film lift-off.The reverse trapeziform shape of resist was made by coating a image-reversal resist layer on a thicker positive resist layer,this technology can achieve the 13 μm thick film lift-off without high edge.And some mechanism problems are discussed.
Keywords:image-reversal  dual layer resist  thick film lift-off  reverse trapeziform shape  
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