Gate-controlled de Haas–van Alphen effect in an interacting two-dimensional electron system |
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Authors: | JI Springborn N Ruhe Ch Heyn MA Wilde D Heitmann D Grundler |
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Institution: | aInstitute of Applied Physics, University of Hamburg, Jungiusstrasse 11, 20355 Hamburg, Germany |
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Abstract: | We have measured the de Haas–van Alphen (dHvA) oscillations of a gated two-dimensional electron system formed in a modulation-doped AlGaAs/GaAs heterojunction by means of a novel and highly sensitive cantilever magnetometer. We achieve a sensitivity of at a magnetic field by detecting the deflection of the cantilever using a fiber optic interferometer. The dHvA oscillation at ν=1 yields a thermodynamic energy gap that scales linearly with the applied magnetic field for . The slope corresponds to an exchange enhanced g factor g*=3.5±0.3 originating from electron–electron interaction in the spin-polarized state of the 2DES. |
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Keywords: | Magnetization Cantilever De Haas– van Alphen effect Two-dimensional electron system Landau quantization Enhanced g factor |
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