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Investigation of current-voltage characteristics of the <Emphasis Type="Italic">n</Emphasis>-CdS-<Emphasis Type="Italic">p</Emphasis>-CdTe structure with an extended layer of the intermediate solid solution |
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| Authors: | Sh?A?Mirsagatov A?Yu?Le?derman B?U?A?tbaev M?A?Makhmudov |
| Institution: | (1) O.O. Chuiko Institute of Surface Chemistry of the National Academy of Sciences of Ukraine, General Naumov St. 17, 03164 Kyiv, Ukraine;(2) Institute of Physics of the National Academy of Sciences of Ukraine, 46 Prospect Nauki, 03028 Kiev, Ukraine;(3) Institute of Physics, NAS of Ukraine, 46 Nauki Avenue, 03164 Kiev, Ukraine;(4) Physics Department, Kiev National Taras Shevchenko University, 2 Acad. Glushkov Ave, 03022 Kiev, Ukraine;(5) Institute of Physics, Montanuniversitaet Leoben, Franz Josef Str. 18, A-8700 Leoben, Austria |
| Abstract: | This paper reports on the results of investigations of n-CdS-p-CdTe heterostructures with an extended layer of the intermediate solid solution which satisfies the ratio w/L ≈ 10 (where w is the base length and L is the diffusion length of minority charge carriers). The current-voltage characteristics of these structures over a wide range of voltages are adequately described by power relationships of the type J ≈ AV α, where the exponent α varies with an increase in the voltage. The results obtained are explained within the theory of drift mechanism of charge transfer with allowance made for the possibility of exchanging free charge carriers inside recombination complexes. |
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