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Photoelectrochemical Properties of Sol-Gel Nb2O5 Films
Authors:Djalma A. de Barros Filho  Pompeu P. Abreu Filho  U. Werner  Michel A. Aegerter
Affiliation:1. Instituto de Física de S?o Carlos, Universidade de S?o Paulo, Caixa Postal 369, 13560-970, S?o Carlos, SP, Brasil
2. Departamento de Química, Universidade Estadual Paulista, Campus de Bauru, Caixa Postal 473, 17033-360, Bauru, SP, Brazil
3. Institut für Neue Materialien, Im Stadtwald, Geb?ude 43, D66-123, Saarbrücken, Germany
Abstract:Structural, optical, electro and photoelectrochemical properties of amorphous and crystalline sol-gel Nb2O5 coatings have been determined. The coatings are n-type semiconductor with indirect allowed transition and present an overall low quantum efficiency (phgr < 4%) for UV light to electric conversion. The photoconducting behavior of the coatings is discussed within the framework of the Gärtner and Södergren models. Improvement can be foreseen if Nb2O5 coatings can be made of 10–20 nm size nanoparticles.
Keywords:sol-gel  Nb2O5  film  photoconductivity  photoelectrochemistry  semiconductor  solar cell
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