Carrier trapping in thin N2O-grown oxynitride/oxide di-layer for PowerMOSFET devices |
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| Authors: | Giuseppe Curr Marco Camalleri Denise Calì Francesca Monforte Fortunato Neri |
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| Institution: | aSTMicroelectronics, Stradale Primosole 50, 95121 Catania, Italy;bDipartimento di Fisica della Materia e Tecnologie Fisiche Avanzate, Universita’ di Messina, Salita Sperone 31, 98166 Messina, Italy |
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| Abstract: | A detailed study of the carrier trapping properties shown by the silicon/oxynitride/oxide gate layers in PowerVDMOS technologies is reported. A quantitative analysis of hole and electron trap densities versus the specific N2O based nitridation process, extracted from Fowler–Nordheim constant current stress kinetics, allows a deep understanding of the role played by those defects in the susceptibility of every nitrided layer. |
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