| 基于碳纳米薄膜/砷化镓范德华异质结的高性能自驱动光电探测器研究 |
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| 引用本文： | 霍婷婷,张冬冬,施祥蕾,潘宇,孙利杰,苏言杰. 基于碳纳米薄膜/砷化镓范德华异质结的高性能自驱动光电探测器研究[J]. 中国光学, 2022, 0(2): 374-387 |
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| 作者姓名： | 霍婷婷 张冬冬 施祥蕾 潘宇 孙利杰 苏言杰 |
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| 作者单位： | 上海交通大学电子信息与电气工程学院微纳电子学系薄膜与微细技术教育部重点实验室;上海航天技术研究院;上海空间电源研究所空间电源技术国家重点实验室 |
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| 基金项目： | 国家自然科学基金(No.61974089);上海市自然科学基金(No.19ZR1426900)。 |
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| 摘 要： | 基于碳纳米材料/体半导体范德华(vdW)异质结的光电器件可以同时实现碳纳米材料的超高载流子迁移率以及体半导体的优异光电性能,且具有结构简单、工艺简便、易于调控界面等优点.尤其是通过调控单壁碳纳米管(SWCNT)的直径/手性、费米能级等可以与体半导体形成能带匹配、具有原子级界面的新型混合维度vdW异质结.本文报道了一种基...
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| 关 键 词： | 范德华异质结 单壁碳纳米管 砷化镓 自驱动光电探测器 |
High-performance self-powered photodetectors based on the carbon nanomaterial/GaAs vdW heterojunctions |
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| HUO Ting-ting,ZHANG Dong-dong,SHI Xiang-lei,PAN Yu,SUN Li-jie,SU Yan-jie. High-performance self-powered photodetectors based on the carbon nanomaterial/GaAs vdW heterojunctions[J]. Chinese Optics, 2022, 0(2): 374-387 |
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| Authors: | HUO Ting-ting ZHANG Dong-dong SHI Xiang-lei PAN Yu SUN Li-jie SU Yan-jie |
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| Affiliation: | (Key Laboratory of Thin Film and Microfabrication(Ministry of Education),Department of Micro/Nano Electronics,School of Electronics Information and Electrical Engineering,Shanghai Jiao Tong University,Shanghai 200240,China;Shanghai Academy of Spaceflight Technology,Shanghai 201109,China;State Key Laboratory of Space Power Technology,Shanghai Institute of Space Power Sources,Shanghai 200245,China) |
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| Abstract: | With the advantages such as simple structure,simple process and easy interface control,the photoelectric devices based on carbon nanomaterial/bulk semiconductor van der Waals(vdW)heterojunctions can fully realize the ultrahigh carrier mobility of carbon nanomaterials and the excellent photoelectric properties of bulk semiconductors.Especially,the novel mixed-dimensional vdW heterojunctions can be prepared by controlling the diameter/chirality and Fermi level of single-walled carbon nanotubes(SWCNTs)to form atomic-level interfaces and match bandgaps with bulk semiconductors.Here,we reported a self-powered broadband photodetector based on the pn vdW heterojunctions by combining(6,5)-enriched semiconducting SWCNT film with n-type GaAs,and used graphene to reduce the probability of carrier recombination in SWCNT film and to promote the carrier transport.The experimental results suggest that the self-powered device exhibits high-sensitivity photoelectric response toward the incident photons in the 405~1064 nm range,and that the max photoelectric responsivity of 1.214 A/W and the specific detectivity of 2×1012 Jones could be achieved at zero bias. |
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| Keywords: | van der Waals heterojunctions single-walled carbon nanotubes GaAs self-powered photode-tectors |
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