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Morphology of growing interfacial patterns
Authors:Debashish Chowdhury
Institution:(1) Institut für Theoretische Physik, Universität zu Köln, D-5000 Köln 41, West Germany;(2) Present address: School of Physical Sciences, Jawaharlal Nehru University, 10067 New Delhi, India
Abstract:A study is made of the morphology of the interfacial patterns in the solid-on-solid model evolving from initial states very far from equilibrium. Monte Carlo simulation is used to study the time dependence of the length, the diffuseness, and the width of the interface during such evolution in the absence as well as in the presence of quenched random field. Moreover, the technique of Walsh-Fourier transform is introduced for analyzing the noise level in such interfacial patterns. A quantity is also introduced that characterizes the interfacial structure locally on a very short length scale. Finally, the latter technique is also applied to the kinetic Ising model evolving from a random initial configuration.
Keywords:SOS model interfaces  Walsh transform
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