Comparison of Volume and Integrated P-I-N Modulators in Millimeter Wave Range |
| |
| Authors: | S. Koshevaya, I. Moroz, V. Grimalsky, M. Tecpoyotl-Torres, J. Escobedo-Alatorre J. Sá nchez-Mondragó n |
| |
| Affiliation: | (1) Autonomous University of State Morelos (UAEM) CIICAp, FCQel., Av. Universidad No. 1001, Z. P. 62210 Cuernavaca, Morelos, Mexico;(2) Pedagogical University of Rivne, 25/6, Danila Halitskovo St., 33027 Rivne, Ukraine;(3) National Institute for Astrophysics, Optics, and Electronics (INAOE), Luis Enrique Erro No. 1, Z. P. 72000 Tonantzintla, Puebla, Mexico |
| |
| Abstract: | Volume and based on surface oriented integrated p-i-n-structures modulators have demonstrated high efficiency in millimeter wave range as quasi-optical modulators and phase shifters. These structures possess high modulation and high-speed properties; sustain great EM powers. However, the modulation characteristics of p-i-n modulators of both mentioned types in millimeter wave range have not been investigated yet. Here, a comparison and criteria of volume and integrated based on Si surface oriented structure modulators in millimeter wave range are presented. |
| |
| Keywords: | p-i-n structures silicon windows modulators millimeter waves |
| 本文献已被 SpringerLink 等数据库收录！ |
|
