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Reflection high-energy electron diffraction real-time monitoring of an etch process implemented in molecular beam epitaxy technology: hydrogen chloride versus GaAs(001) epilayers |
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| Authors: | A. Hamoudi T. Sogawa T. Saitoh J. Yumoto |
| Affiliation: | (1) NTT Basic Research Laboratories, 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan, JP |
| Abstract: | Received: 13 November 1997/Accepted: 19 January 1998 |
| Keywords: | PACS: 68.55.Jk 81.05.Ea 81.15.Hi 81.65.Cf |
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