Spectroscopic ellipsometry study of porous silicon-tin oxide nanocomposite layers |
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Authors: | V V Bolotov N A Davletkil’deev A A Korotenko V E Roslikov Yu A Sten’kin |
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Institution: | 1.Rzhanov Institute of Semiconductor Physics (Omsk Branch), Siberian Branch,Russian Academy of Sciences,Omsk,Russia |
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Abstract: | The layer-by-layer distribution of components in a porous silicon-tin oxide nanocomposite produced by the following three
methods is studied by spectroscopic ellipsometry: chemical vapor deposition, atomic layer deposition, and magnetron sputtering.
It is shown that, in the nanocomposites fabricated by these methods, SnO
x
penetrates to a depth more than 400 nm and is nonuniformly distributed over the porous layer thickness. The nanocomposite
prepared by magnetron sputtering followed by heat treatment has the maximum penetration depth and the maximum uniformity of
layer-by-layer SnO
x
distribution. |
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Keywords: | |
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