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Topological evolution of self-induced silicon nanogratings during prolonged femtosecond laser irradiation
Authors:E V Golosov  A A Ionin  Y R Kolobov  S I Kudryashov  A E Ligachev  S V Makarov  Y N Novoselov  L V Seleznev and D V Sinitsyn
Institution:(1) Laser Zentrum Hannover e.V., Hollerithallee 8, 30419 Hannover, Germany;(2) Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology Hellas (FORTH), Vassilika Vouton, P.O. Box 1527, Heraklion, 71110, Greece;(3) Physics Department, University of Crete, Heraklion, 71003, Greece
Abstract:Gradual evolution of self-induced silicon surface topology from one-dimensional ridge-like to two-dimensional spike-like nanogratings and then to isotropic sets of micro-columns was observed by evenly increasing IR and UV femtosecond laser irradiation dose. This topological evolution exhibits clear indications of consequent melting and vaporization processes being set up during the prolonged laser irradiation. Monotonously decreasing cumulative IR and UV femtosecond laser-nanostructuring thresholds may indicate an increase of optical absorbance of the laser-nanostructured silicon surfaces versus the increasing laser dose, consistent with the consequent onset of the abovementioned thermal modification processes.
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