Scanning near-field cathodoluminescence microscopy of an Si+ implanted and thermally annealed SiO2 layer

A scanning near-field cathodoluminescence microscope (SNCLM) is successfully used to image the cathodoluminescence of an Si⁺ implanted and thermally annealed submicronic SiO₂ layer. Owing to the subwavelength resolution of the system a “cross-sectional” cathodoluminescence image was obtained. The intensity image profile shows that sample luminescence results from the whole SiO₂ layer confirming a preceding electroluminescence study. Sample luminescence is attributed to point defects generated into the whole SiO₂ layer during Si⁺ ion implantation and thermal annealing.