EELS characterization of TiN grown by the DC sputtering technique |
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| Institution: | 1. Centro de Investigación Cientı́fica y de Educación Superior de Ensenada Km.107, Carretera Tijuana-Ensenada, Ensenada B.C. 22800, Mexico;2. Centro de Ciencias de la Materia Condensada-UNAM, A.Postal 2681, Ensenada B.C. 2800, Mexico;1. Reshetnev Siberian State University of Science and Technology, 660037 Krasnoyarsk, Russia;2. Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Akademgorodok, 50, 660036 Krasnoyarsk, Russia;1. Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Materials Science and Engineering, Northeastern University, Shenyang 110819, China;2. Liaoning Engineering Laboratory of Special Optical Functional Crystals, College of Environmental and Chemical Engineering, Dalian University, Dalian 116622, China;3. Advanced Materials Processing Unit, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0044, Japan;4. State Key Laboratory of Advanced Technologies for Comprehensive Utilization of Platinum Metals, Kunming Institute of Precious Metals, Kunming 650106, China;1. Graduate School of Human and Environmental Studies, Kyoto University, Sakyo-ku, Kyoto 606-8501, Japan;2. Research Institute for Interdisciplinary Science, Okayama University, Okayama 700-8530, Japan;3. Hiroshima Synchrotron Radiation Center, Hiroshima University, Higashi-hiroshima, Hiroshima 739-0046, Japan;4. Department of Physics, University of Roma ”La Sapienza” Piazzale Aldo Moro 2, 00185 Roma, Italy;5. Department of Applied Physics, Waseda University, 3-4-1 Okubo, Shinjuku-ku, 169-8555 Tokyo, Japan;1. National Center for Electron Microscopy in Beijing, Key Laboratory of Advanced Materials (MOE) and The State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China;2. Department of Physics and Astronomy, Uppsala University, Box 516, S-751 20 Uppsala, Sweden;3. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;1. Key Laboratory of Advanced Ceramics and Machining Technology of Ministry of Education, Tianjin University, Weijin Road No.92, Tianjin 300072, China;2. Kazuo Inamori School of Engineering, Alfred University, Alfred, NY 14802, United States |
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| Abstract: | Titanium nitride thin films were deposited on monocrystalline silicon (mc-Si) substrates by direct current reactive magnetron sputtering. Auger electron spectra (AES) of deposited films at different nitrogen partial pressures, show the typical N KL23L23 and Ti L3M23M23 Auger transition overlapping. Also, changes in the Ti L3M23M45 Auger transition peak are observed. X-ray diffraction and high resolution electron microscopy (HRTEM) of a golden color TiN/mc-Si sample, reveal a preferential polycrystalline columnar growth in the 〈111〉 orientation. This sample was also analyzed by electron energy-loss spectroscopy (EELS). The N/Ti elemental ratio is slightly different to the value determined by AES. Atomic distribution around the N atoms is in agreement with that expected from the N atom in the fcc unit cell of TiN. This distribution was obtained via an extended energy-loss fine structure (EXELFS) analysis from EELS spectra. |
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