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Universal relationship between giant magnetoresistance and anisotropic magnetoresistance in spin valve multilayers
Institution:1. School of Mechanical Engineering, Beijing Institute of Technology, Beijing 100081, P R China;2. Beijing Institute of Technology, Institute of advanced Technology, Jinan, P R China;3. GAC Automotive Research & Development Center, Guangzhou 511434, P R China
Abstract:We measure the giant magnetoresistance (GMR) with the current both parallel and perpendicular to the direction of the magnetization in the ferromagnetic (FM) layers and thus probe the anisotropy of the effective mean free paths for the spin-up and spin-down electrons, seen in the anisotropic magnetoresistance. We find that the difference of the GMR in the two configurations, when expressed in terms of the sheet conductance, displays a nearly universal behavior as a function of GMR. On interpreting the results within the Boltzmann transport formalism we demonstrate the importance of bulk scattering for GMR.
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