Calculation of the carrier-induced refractive index change in InSb |
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Authors: | P P Paskov L I Pavlov |
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Institution: | (1) Institute of Electronics, 72 Trakia boul., BG-1784 Sofia, Bulgaria |
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Abstract: | We report a theoretical model for an estimate of carrier-induced changes in the refractive index of InSb at room temperature. The dispersion of n within the photon-energy interval of 0.12–0.24 eV is investigated for nonequilibrium carrier concentrations of 1015–1018 cm–3. An analysis of the influence of the initial carrier density on n is performed. The obtained results can help to develop InSb opto-electronic devices. |
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Keywords: | 78 20 42 65 |
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