Insulating tubular BN sheathing on semiconducting nanowires |
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Authors: | Zhu Ying-Chun Bando Yoshio Xue Dong-Feng Xu Fang-Fang Golberg Dmitri |
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Institution: | Advanced Materials Laboratory, National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-044, Japan. yingchunzhu@yahoo.com |
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Abstract: | An effective method was developed for generation of insulating tubular boron nitride (BN)-sheathed nanostructures. ZnS nanowires and multilayered Si-SiO2 nanowires were successfully sheathed with insulating tubular BN-forming nanocables. Both the semiconductor nanowire cores and the BN sheaths are crystalline with well-uniform morphologies. |
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