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Insulating tubular BN sheathing on semiconducting nanowires
Authors:Zhu Ying-Chun  Bando Yoshio  Xue Dong-Feng  Xu Fang-Fang  Golberg Dmitri
Institution:Advanced Materials Laboratory, National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-044, Japan. yingchunzhu@yahoo.com
Abstract:An effective method was developed for generation of insulating tubular boron nitride (BN)-sheathed nanostructures. ZnS nanowires and multilayered Si-SiO2 nanowires were successfully sheathed with insulating tubular BN-forming nanocables. Both the semiconductor nanowire cores and the BN sheaths are crystalline with well-uniform morphologies.
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