Random fields in Ge-Si alloys produced by doping

A calculation is performed and estimates made of the binary correlation functions of the random field produced by the difference in the atomic pseudopotentials of solvent and dissolved materials. Also evaluated are elastic deformation fields in unordered Ge-Si solid replacement solutions with low Si content (up to 10 at. %).Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 41–46, February, 1987.The author heartily thanks V. L. Bonch-Bruevich for his interest in the current study and many valuable discussions.