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用于质子和伽马射线探测的金刚石薄膜探测器的辐照性能
引用本文:王兰,欧阳晓平,范如玉,张忠兵,潘洪波,刘林月,吕反修.用于质子和伽马射线探测的金刚石薄膜探测器的辐照性能[J].强激光与粒子束,2008,20(4):653-656.
作者姓名:王兰  欧阳晓平  范如玉  张忠兵  潘洪波  刘林月  吕反修
作者单位:1. 清华大学 工程物理系, 北京 100084; 2. 西北核技术研究所, 西安 710024; 3. 北京科技大学 材料学院, 北京 100083
摘    要: 研制出CVD金刚石薄膜探测器,在国家串列加速器和60Co稳态辐射源上分别完成了该探测器对9 MeV质子束流和1.25 MeV γ射线的辐照性能研究。结果表明:该探测器在9 MeV质子照射累积强度达到1013 cm-2时,探测器信号电荷收集效率减小量低于3.5%,辐照前后探测器暗电流没有明显变化。计算得到9 MeV质子对该探测器的损伤系数为1.3×10-16 μm-1·cm2。由于γ射线与金刚石作用产生的电子起到了填补缺陷的作用,探测器信号电荷收集效率随γ射线照射剂量的增加略有增加,在γ射线累积照射量达到10.32 C/kg时,其增幅小于0.7%。说明金刚石薄膜探测器具有较高耐辐照强度,适用于高强度辐射测量领域。

关 键 词:金刚石薄膜  半导体探测器  辐照性能  电荷收集效率  辐照损伤系数
收稿时间:2007/7/18

Irradiation effects of proton and gamma -ray on CVD diamond detector
WANG Lan,OUYANG Xiao-ping,FAN Ru-yu,ZHANG Zhong-bing,PAN Hong-bo,LIU Lin-yue,L Fan-xiu.Irradiation effects of proton and gamma -ray on CVD diamond detector[J].High Power Laser and Particle Beams,2008,20(4):653-656.
Authors:WANG Lan  OUYANG Xiao-ping  FAN Ru-yu  ZHANG Zhong-bing  PAN Hong-bo  LIU Lin-yue  L Fan-xiu
Institution:1. Department of Engineering Physics, Tsinghua University, Beijing 100084, China; 2. Northwest Institute of Nuclear Technology, Xi’an 710024, China; 3. Material College, University of Science and Technology, Beijing 100083, China
Abstract:Irradiation effects of proton and gamma-ray on a CVD diamond detector were studied on Beijing Tandem accelerator and 60Co source. The decrease of the detector’s signal current was less than 3.5% after irradiated by 1013 cm-2,9 MeV continuous protons. Dark current didn’t change obviously after the proton irradiation. The calculated radiation damage coefficient is 1.3×1016 μm-1·cm2, which is much higher than that of Si PIN detectors. The signal current increased a little after irradiated by 10.32 C/kg and 1.25 MeV γ-ray, as the electrons excited by γ-ray can deduce traps in diamond. And the increase is less than 0.7%. Diamond detector has high radiation hardness and can be used in high radiation detection.
Keywords:Semiconductor detector  Radiation effects  Charge collection efficiency  Irradiation defect coefficient
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