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Resistance of a tunnel barrier with a pinhole
Authors:A. V. Vedyayev  M. E. Zhuravlev  E. Yu. Tsymbal  B. Dieny
Affiliation:(1) CEA/Grenoble, Département de Recherche Fondamentale sur la Matière Condensée, SPINTEC, 38054 Grenoble Cedex 9, France;(2) Moscow State University, Moscow, 119992, Russia;(3) Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Moscow, 119991, Russia;(4) Department of Physics and Astronomy and Center for Materials Research and Analysis, University of Nebraska, Lincoln, Nebraska 68588, USA
Abstract:Transport properties of a system composed of two conducting ferromagnetic layers connected through a cylindrical nanowire are studied. The system models a tunnel barrier in which the conducting layers are connected through a pinhole. The resistance and the tunnel magnetoresistance are calculated as a function of the pinhole radius and the diffuse resistance of the conducting layers. The ratio between the contributions of the diffuse resistance of the layers and the ballistic resistance of the pinhole to the total resistance is studied.
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