InP growth and properties

Bulk polycrystalline InP is synthesized from the elements via a gradient freeze process. Hall data for a typical boule are N_d-N_a= 4.7 × 10¹⁵/cm³ and Μ77 = 28,000 cm²/V-sec. Photoluminescence data indicate that zinc is present as an acceptor impurity in the polycrystalline InP and in nominally undoped LEC single crystals grown using the synthesized InP as charge material. A series of doping experiments have determined the effective segregation coefficient to be 1.6 × 10⁻³ for Fe in InP. Semi-insulating InP crystals with resistivity > 10⁷ ohm—cm have been grown consistently from melts doped with 150 ppm Fe.