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Control of Alq3 wetting layer thickness via substrate surface functionalization
Authors:Tsoi Shufen  Szeto Bryan  Fleischauer Michael D  Veinot Jonathan G C  Brett Michael J
Institution:Department of Electrical and Computer Engineering, University of Alberta, Edmonton, Alberta, Canada. stsoi@ece.ualberta.ca
Abstract:The effects of substrate surface energy and vapor deposition rate on the initial growth of porous columnar tris(8-hydroxyquinoline)aluminum (Alq3) nanostructures were investigated. Alq3 nanostructures thermally evaporated onto as-supplied Si substrates bearing an oxide were observed to form a solid wetting layer, likely caused by an interfacial energy mismatch between the substrate and Alq3. Wetting layer thickness control is important for potential optoelectronic applications. A dramatic decrease in wetting layer thickness was achieved by depositing Alq3 onto alkyltrichlorosilane-derivatized Si/oxide substrates. Similar effects were noted with increasing deposition rates. These two effects enable tailoring of the wetting layer thickness.
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