Control of Alq3 wetting layer thickness via substrate surface functionalization |
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Authors: | Tsoi Shufen Szeto Bryan Fleischauer Michael D Veinot Jonathan G C Brett Michael J |
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Institution: | Department of Electrical and Computer Engineering, University of Alberta, Edmonton, Alberta, Canada. stsoi@ece.ualberta.ca |
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Abstract: | The effects of substrate surface energy and vapor deposition rate on the initial growth of porous columnar tris(8-hydroxyquinoline)aluminum (Alq3) nanostructures were investigated. Alq3 nanostructures thermally evaporated onto as-supplied Si substrates bearing an oxide were observed to form a solid wetting layer, likely caused by an interfacial energy mismatch between the substrate and Alq3. Wetting layer thickness control is important for potential optoelectronic applications. A dramatic decrease in wetting layer thickness was achieved by depositing Alq3 onto alkyltrichlorosilane-derivatized Si/oxide substrates. Similar effects were noted with increasing deposition rates. These two effects enable tailoring of the wetting layer thickness. |
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