| Abstract: | A thermodynamic study is performed for the systems (Ga or In)‐Sb‐O‐Si in order to better understand the difference observed during dewetting experiments of GaSb and InSb in silica ampoules. Results show that the melts can be considered as non reactive toward silica. When the atmosphere is clean (≤ 1 ppm O2), no oxide is formed, while, under oxidising atmosphere, oxides exist above the melting point of the antimonide and are known to increase the wetting angle of the melt on the crucible. However the temperature range for oxide stability is smaller in the case of InSb and this may explain why dewetting is easy for GaSb in presence of oxygen, while it is difficult for InSb. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
